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SUBMINIATURE PHOTOINTERRUPTER
Description
The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter.
MIT-4A11B
Package Dimensions
Unit : mm
2
C
E
3
1
A 4.2
C
4
Features
l l l l
Ultra-compact PWB mounting type package High sensing accuracy ( Slit width: 0.3mm ) Gap between light emitter and detector: 1.2mm
4.2 1.5
(1.0)
(0.3)
1.2
2.8 3.9 5.2
Applications
l l l
Cameras Floppy disk drives Printer
1.50.1Hold 4-0.5 4-0.15 4.0 MIN.
*2.54
*3.2
NOTE
1. Tolerance is 0.25 mm (.010") unless otherwise noted. 2. Burr's dimension : 0.15MAX 3.( ) : Reference dimensions 4. The dimensions indicated by * refer to those measured from the lead base @TA =25 J Symbol IF VR Pad V(BR)CEO V(BR)ECO PC PTOT Topr Tstg Tsol Maximum Rating 50 5 75 30 5 75 100 -25J to + 85J -40J to + 100J 260oC for 3 seconds Unit mA V mW V V mW mW
Absolute Maximum Ratings
Parameter Continuous Forward Current INPUT Reverse Voltage Power Dissipation Collector-emitter breakdown voltage OUTPUT Emitter-Collector breakdown voltage Collector power dissipation Total power dissipation Operating Temperature Range Storage Temperature Range Soldering temperature
Unity Opto Technology Co., Ltd.
01/30/2002
MIT-4A11B
Optical-Electrical Characteristics
@TA =25J symbol VF IR Iceo Output Collector Emitter Saturation Voltage VCE(SAT) Collector Current Ic (on) tr Transfer Cha- Response Time (RISE) tf racteristics Response Time (FALL) Input Parameter Forward Voltage Reverse Current Collector Dark Current Min. Typ. 1.2 Max. 1.4 10 100 0.4 5.0 150 150 Unit. Test Conditions IF =20mA V A VR =3V nA Vce =10V V mA S S Ic=0.1mA,Ee=0.1mW/cm2 IF =20mA, Vce =5V Ic=100A, Vce =5V RL=1K
0.6 50 50
Typical Optical-Electrical Characteristic Curves
Forward Current IF (mA)
60 50 40 30 20 10 0 -25 0 25 50 75 100 120
Power Dissipation (mW)
100 80 60 40 20 0 -25
PTOT PD , PC
0
25
50
75
100
Ambient Temperature TA Fig.1 forward Current VS. Ambient Temperature Forward Current IF (mA) Collector Current Ic (mA)
100 80 60 40 20 0 0.8 1.2 1.6 2.0 2.4 2.8 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0
Ambient Temperature TA ( oC ) Fig.2 Power Dissipation vs Ambient Temperature
Vce=2V Ta=25J
5
10
15
20
25
30
Forward Voltage VF (V) Fig.3 Forward Current VS Forward Voltage Relative Collector Current (%) Collector Current Ic (mA)
2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 Ta=25J 120 100 80 60 40 20 0 -25 20mA IF=15mA 10mA 4mA
Forward Current IF (mA) Fig.4 Collector Current vs Forward Current
2
4
6
8
10
12
0
25
50
75
o
100
Collector-Emitter Voltage Vce (V) Fig.5 Collector Current vs. Vce
Ambient Temperature TA ( C ) Fig.6 Relative Collector Current VS. TA
Unity Opto Technology Co., Ltd.
01/30/2002
MIT-4A11B
Typical Optical-Electrical Characteristic Curves
Collector Dark Current ICEO
10000 VCE=20V 1000 100 10 1 0 25 50 75 100 1000
Response Time (s)
100 10 1
V CE =2V I C =100 A Ta=25 J
0.1 0.01
0.1
1
10
100
Ambient Temperature TA ( J ) Fig.7 Collector Dark Current vs. Ambient Temperature
100
Load Resistance Rt (K) Fig.8 Response Time vs. Load Resistance
Relative Sensitivity (%)
Ta=25J
Response Time Measurement Circuit
80 60 40 20 0 700 Input 800 900 1000 1100 1200 VR Input Output tr
90 % 10 %
t t tf IL VCC
Wavelength (nm) Fig.9 Spectral Sensitivity (Detecting side)
Output
Sensing Position Characteristics (Typical)
X Y
I F =20mA V CE =5V I F =20mA V CE =5V Ta=25 J
Relative light current IL (%)
100
Ta=25 J
(Center of optical axis) 50 X Y 0 0 -2 -1 0 +1 +2 (mm) -2 -1 0 +1 +2 (mm) 0 + +
Distance d (mm)
Unity Opto Technology Co., Ltd.
01/30/2002

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